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DLA - SMD-5962-95666 REV A

MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 February 1996
Status: inactive
Page Count: 12
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 TLV2252M Dual, rail-to-rail, low power, operational amplifiers 02 TLV2254M Quad, rail-to-rail, low power, operational amplifiers 03 TLV2252AM Dual, rail-to-rail, low power, operational amplifiers with enhanced VIO 04 TLV2254AM Quad, rail-to-rail, low power, operational amplifiers with enhanced VIO

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VDD) . . . . . . . . . . . . . . . . . . +8.0 V dc 2/ Differential input voltage (VID) . . . . . . . . . . . . ±VDD 3/ Input voltage range (VIN) . . . . . . . . . . . . . . . −VDD − 0.3 V to +VDD Input current, each input (IIN) . . . . . . . . . . . . +5 0 mA to −5.0 mA Output current (IOUT) . . . . . . . . . . . . . . . . . +50.0 mA to −50.0 mA Total current into +VDD . . . . . . . . . . . . . . . . +50.0 mA to −50.0 mA Total current out of −VDD . . . . . . . . . . . . . . . +50.0 mA to −50.0 mA Duration of short-circuit current at or below +25°C . . Unlimited 4/ Operating free-air temperature range (TA) . . . . . . . −55°C to +125°C Storage temperature range (TSTG) . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering 10 seconds) . . . . . . . . +260°C Thermal resistance, junction-to-case (θJC) . . . . . . . See MIL-STD-1835 Maximum junction temperature (TJ) . . . . . . . . . . . +150°C Maximum power dissipation (PD): 5/ Cases C and 2 . . . . . . . . . . . . . . . . . . . . 1375 mW Cases D and H . . . . . . . . . . . . . . . . . . . . 700 mW Case P . . . . . . . . . . . . . . . . . . . . . . . 1050 mW

Supply voltage (±VDD) . . . . . . . . . . . . . . . . . 2.7 V dc to 8.0 V dc Input voltage range (VIN) . . . . . . . . . . . . . . . −VDD to +VDD − 1.3 V Common-mode input voltage (VIC) . . . . . . . . . . . . −VDD to +VDD − 1.3 V Ambient operating temperature range (TA) . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 23, 2022
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
January 22, 2014
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
May 2, 2007
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 26, 2001
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
January 12, 2001
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-95666 REV A
February 5, 1996
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 10, 1995
MICROCIRCUIT, LINEAR, DUAL/QUAD, RAIL-TO-RAIL, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
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