scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shell be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 40788 Radiation hardened CMOS 8 input NOR/OR gate 02 40788N Radiation hardened CMOS 8 input NOR/OR gate with neutron irradiated die

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 dual-in-line package X CDFP3-F14 14 flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . −0.5 V dc to +20 V dc Input voltage range . . . . . . . . . . . . . . . . . . . . −0.5 V dc to V_DD + 0.5 Vdc DC input current, any one input. . . . . . . . . . . . . . . ±10 mA Device dissipation per output transistor . . . . . . . . . . 100 mW Storage temperature range (T_STG) . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . +265°C Thermal resistance, junction-to-case (Θ_JC): Case C . . . . . . . . . . . . . . . . . . . . . . . . . 24 C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . 30 C/W Thermal resistance, junction-to-ambient Θ_JA): Case C . . . . . . . . . . . . . . . . . . . . . . . . . 74 C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . 116 C/W Junction temperature (T_J). . . . . . . . . . . . . . . . . . +175°C Maximum power dissipation at T_A = +125 C (P_D): 4/ Case C. . . . . . . . . . . . . . . . . . . . . . . . . . 0.68 W Case X. . . . . . . . . . . . . . . . . . . . . . . . . . 0.43 W

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . . . . 3.0 V dc to +18 V dc Case operating temperature range (T_C). . . . . . . . . . . . . . . −55°C to +125°C Input voltage (V_IN) . . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Output voltage (V_OUT) . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Radiation features: Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 × 10⁵ Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5). . >75 MEV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . > 5 × 10⁸ Rads(Si)/s 5/ Dose rate latch-up . . . . . . . . . . . . . . . . . . . . . . . > 2 × 10⁸ Rads(Si)/s 5/ Dose rate survivability . . . . . . . . . . . . . . . . . . . . > 5 × 10¹¹ Rads(Si)/s 5/ Neutron irradiated 6/ . . . . . . . . . . . . . . . . . . . . . > 1 × 10¹⁴ neutrons/cm²

Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.

SPECIFICATION MILITARY MIL-I-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines.

BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMD's). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings.

(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.)

In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence.

intended Use: