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DLA - SMD-5962-87515 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 January 1993
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 8K × 8 UV EPROM 45 ns 02 8K × 8 UV EPROM 55 ns 03 8K × 8 UV EPROM 70 ns 04 8K × 8 UV EPROM 90 ns 05 8K × 8 UV EPROM 45 ns 06 8K × 8 UV EPROM 55 ns 07 8K × 8 UV EPROM 35 ns 08 8K × 8 UV EPROM 35 ns 09 8K × 8 UV EPROM 45 ns 10 8K × 8 UV EPROM 55 ns 11 8K × 8 UV EPROM 25 ns 12 8K × 8 UV EPROM 25 ns

The case outline(s) shall be as designated in MIL-STD-1835, and as follows:

Outline letter Descriptive designator Terminals Package style J GDIP1-T24 OR CDIP2-T24 24 Dual-in-line 2/ K GDFP2-F24 OR CDFP3-F24 24 Flat pack 2/ L GDIP3-T24 OR CDIP4-T24 24 Dual-in-line 2/ 3 CQCC1-N28 28 Square leadless chip carrier 2/

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Storage temperature - - - - - - - - - - - - - - - −65°C to +150°C Voltages on any pin with respect to ground- - - - −0.5 V dc to +7.0 V dc VPP with respect to ground- - - - - - - - - - - - −0.5 V dc to +14.0 V dc Maximum power dissipation (PD) 3/ - - - - - - - - 1 W Lead temperature (soldering, 10 seconds)- - - - - +300°C Thermal resistance, junction-to-case (θJC)- - - - MIL-STD-1835 Junction temperature (TJ) 4/- - - - - - - - - - - +150°C

Case operating temperature (TC) - - - - - - - - - −55°C to +125°C Supply voltage (VCC)- - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 14, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
March 14, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 6, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87515 REV A
January 21, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 21, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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