scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HS-RTX2010RH 16-bit microcontroller radiation hardened, SOS

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA3-P85 85 Pin grid array Y See figure 1 84 Ceramic quad flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 or classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage . . . . . . . . . . . . . . . . . +6.0 V Input, Output I/O voltage applied . . . . . . . . GND − 0.3 V to VDD + 0.3 V Storage temperature range . . . . . . . . . . . . −65°C to +150°C Junction temperature (T_J) . . . . . . . . . . . . +175°C Lead temperature (solder 10 seconds) . . . . . . +300°C Thermal resistance, Junction-to-case (Θ_JC) Case X . . . . . . . . . . . . . . . . . . . . 3°C/W Case Y . . . . . . . . . . . . . . . . . . . . 4°C/W Thermal resistance, Junction-to-Ambient (Θ_JA) Case X . . . . . . . . . . . . . . . . . . . . 29°C/W Case Y . . . . . . . . . . . . . . . . . . . . 34°C/W Maximum power dissipation . . . . . . . . . . . . 2.0 W

Operating supply voltage range . . . . . . . . . +4.5 V to +5.5 V Operating temperature range . . . . . . . . . . . −55°C to +125°C Maximum rise and fall time . . . . . . . . . . . 5 ns max Radiation features Total Dose . . .. . . . . . . . . . . . . . . . 300K RAD(SI) Single event phenomenon (SEP) effective Linear energy threshold (LET), No upset . . . . > 100 MeV/(cm²/mg)2/ Dose rate upset (20 ns pulse) . . . . . . . . . > 1 × 10¹¹ Rads (SI)/s2/ Latch up . . . . . . . . . . . . . . . . . . . . None 2/ Dose rate survivability . . . . . . . . . . . . > 1 × 10¹² Rads (SI)/s 2/ Cosmic ray upset immunity . . . . . . . . . . . < 1 × 10 ⁻¹⁰ Errors/Bit-Day 2/3/

intended Use: