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DLA - SMD-5962-88708

MICROCIRCUIT, DIGITAL BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 August 1988
Status: inactive
Page Count: 9
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54F30 8-input positive-NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358 × .358 × .100"), square chip carrier package

Supply voltage range- - - - - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range - - - - - - - - - - - - - - - - −1.2 V dc at −18 mA to +7.0 V dc Input current range - - - - - - - - - - - - - - - - −30 mA to 5.0 mA Voltage applied to any output in the high state - - −0.5 V dc to 5.5 V dc Current into any output in the low state- - - - - - 40 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation, PD 1/- - - - - - - - - - 22 mW Lead temperature (soldering, 10 seconds)- - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +175°C

Supply voltage range (VCC)- - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum. Minimum high level input voltage (VIH) - - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - - 0.8 V dc Input clamp current (IIC) - - - - - - - - - - - - - −18 mA High level output current (IOH) - - - - - - - - - - −1.0 mA Low level output current (IOL) - - - - - - - - - - 20 mA Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when .military specifications do not exist and qualified military devices that will perform the required function are not available... View More

Document History

August 26, 2019
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 14, 2015
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 12, 2008
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 10, 2000
MICROCIRCUIT, DIGITAL BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88708
August 5, 1988
MICROCIRCUIT, DIGITAL BIPOLAR, ADVANCED SCHOTTKY, 8-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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