DLA - MIL-S-19500/169H
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N3070, 1N3070-1, 1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1 JAN, JANTX, JANTXV, JANS, AND JANC
| Organization: | DLA |
| Publication Date: | 19 May 1994 |
| Status: | inactive |
| Page Count: | 10 |
scope:
This specification covers the detail requirements for silicon, switching diodes. Four levels of product assurance are provided for each device type and one product assurance level for die, as specified in MIL-S-19500.
See figures 1, 2, and 3 (similar to DO-7 and DO-35).
Primary electrical characteristics at TA = +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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