NPFC - MIL-S-19500/411
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
| Organization: | NPFC |
| Publication Date: | 26 April 1993 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the detail requirements for silicon rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels of type 1N. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
See figure 2 and figure 3.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, U.S. Army Research Laboratory, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ 07703-5601, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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