NPFC - MIL-S-19500/411
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY IN5415 THROUGH 1N5420, 1N5415US THROUGH IN5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
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| Organization: | NPFC |
| Publication Date: | 1 February 1994 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the detail requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
See figures 1 and 2. (Similar to DO-41)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Director, US Army Research Laboratory, ELectronics and Power Sources Directorate, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ 07703-5601 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
October 27, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, DEVICE TYPES 1N5415 THROUGH 1N5420, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for fast recovery silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each...
July 21, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, DEVICE TYPES 1N5415 THROUGH 1N5420, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for fast recovery silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each...
September 24, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), DEVICE TYPES 1N5415 THROUGH 1N5420, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device....
September 19, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), 1N5415 THROUGH 1N5420, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device....
May 5, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
October 17, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
October 17, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA...
April 8, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA...
April 7, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANJ, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for silicon rectifier diodes. Five levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
February 5, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
A description is not available for this item.
October 9, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANJ, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the performance requirements for silicon rectifier diodes. Five levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
October 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANJ, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
A description is not available for this item.
July 30, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANJ, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the detail requirements for silicon rectifier diodes. Five levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for...
MIL-S-19500/411
February 1, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY IN5415 THROUGH 1N5420, 1N5415US THROUGH IN5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the detail requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for radiation...
April 26, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification covers the detail requirements for silicon rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for...
December 17, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
A description is not available for this item.
December 13, 1984
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 25, 1984
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 30, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 JANS
A description is not available for this item.
September 22, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 TX AND TXV
A description is not available for this item.
April 10, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 TX AND TXV
A description is not available for this item.
February 18, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 TX AND TXV
A description is not available for this item.
May 16, 1974
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420 TX AND TXV
A description is not available for this item.
November 28, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER JAN, JAN TX AND JAN TXV TYPES 1N5415 THROUGH 1N5420
A description is not available for this item.