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DLA - SMD-5962-88588 REV A

MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 December 1996
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 1024 × 4 CMOS static RAM 35 ns 02 See 6.6 1024 × 4 CMOS static RAM 25 ns 03 See 6.6 1024 × 4 CMOS static RAM 15 ns 04 See 6.6 1024 × 4 CMOS static RAM 35 ns 05 See 6.6 1024 × 4 CMOS static RAM 25 ns 06 See 6.6 1024 × 4 CMOS static RAM 15 ns

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat pack L GDIP3-T24 or CDIP4-T24 24 Dual-in-line X CQCC4-N28 28 Rectangular leadless chip carrier

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage to ground potential ..................... −0.5 V dc to +7.0 V dc DC voltage applied to outputs .......................... −0.5 V dc to +7.0 V dc DC input voltage ....................................... −3.0 V dc to +7.0 V dc DC output current ...................................... 20 mA Storage temperature range .............................. −65°C to +150°C Maximum power dissipation (PD) ......................... 1.0 W 1/ Lead temperature (soldering, 10 seconds) ............... +300°C Thermal resistance, junction-to-case (ΘJC): Cases K, L, and X ..................................... See MIL-STD-1835 Junction temperature (TJ) .............................. +150°C 2/

Supply voltage range (VCC) ............................. 4.5 V dc minimum to 5.5 V dc maximum High level input voltage range (VIH) ................... 2.0 V dc to 6.0 V dc Low level input voltage range (VIL) .................... −3.0 V dc to +0.8 V dc Case operating temperature range (TC) .................. −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

September 19, 2023
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 2, 2016
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
January 4, 2008
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 1, 2002
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88588 REV A
December 30, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
August 23, 1988
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices....
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