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DLA - SMD-5962-88588

MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 23 August 1988
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices.

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 1024 × 4 CMOS static RAM with reset 35 ns 02 (See 6.4) 1024 × 4 CMOS static RAM with reset 25 ns 03 (See 6.4) 1024 × 4 CMOS static RAM with reset 15 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11A (28-terminal, .560" × .358" × .075"), rectangular chip carrier package

Supply voltage to ground potential - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs- - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - 20 mA Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/- - - - - - - - - - 1.0 W 1/ Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases K, L and X - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - +150°C 2/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.0 V dc to 6.0 V dc Low level input voltage range (VIL)- - - - - - - - - −3.0 V dc to +0.8 V dc Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 19, 2023
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 2, 2016
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
January 4, 2008
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 1, 2002
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
A description is not available for this item.
December 30, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
SMD-5962-88588
August 23, 1988
MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 4 CMOS STATIC RAM WITH RESET, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices....
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