UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-86828 REV B

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 15 March 1988
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC366 Buffer, hex 3-state inverting with common enables

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - ±35 mA DC VCC or GND current (per pin)- - - - - - - - - - - ±70mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - - - - - - - - - 500mW Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases E and 2- - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - +2.0 V dc to +6.0 V dc Case operating temperature range (TC)- - - - - - - - −55°C to +125°C Input rise or fall time: VCC = 2.0 V- - - - - - - - - - - - - - - - - - - - 0 to 1,000 ns VCC = 4.5 V- - - - - - - - - - - - - - - - - - - - 0 to 500 ns VCC = 6.0 V- - - - - - - - - - - - - - - - - - - - 0 to 400 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 16, 2022
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
December 22, 2015
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREESTATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 22, 2010
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 18, 2004
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-86828 REV B
March 15, 1988
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 23, 1987
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
September 22, 1986
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
Advertisement