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DLA - SMD-5962-87550 REV A

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 March 1993
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC240 Octal buffer/line driver with 3-state inverted outputs. 02 54AC11240 Octal buffer/line driver with 3-state inverted outputs.

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, ½" × 1 ¼"), dual-in-line package K F-6 (24-lead, ⅜" × ⅝"), flat package R D-8 (20-lead, ¼" × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package 3 C-4 (28-terminal, .450" × .450"), square chip carrier package

Supply voltage range 1/ - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage 1/ - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - ±50 mA DC VCC or GND current (per pin) - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds)- - - - - - - +245°C Thermal resistance, junction-to-case (θJC): Cases J, K, R, and S- - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Cases 2 and 3 - - - - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (TJ) 3/ - - - - - - - - - - - - +175°C

Supply voltage (VCC) 4/- - - - - - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - - - −55°C to +125°C Input rise or fall times: VCC = 3.6 V - - - - - - - - - - - - - - - - - - - - 0 to 116 ns (10-90 percent, 40 ns/V) VCC = 5.5 V - - - - - - - - - - - - - - - - - - - - 0 to 88 ns (10-90 percent, 20 ns/V)

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 24, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 22, 2012
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 20, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 19, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 16, 2005
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 23, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 6, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 24, 1998
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87550 REV A
March 1, 1993
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 7, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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