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DOD - SMD 5962-96862

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 9 September 1996
Status: inactive
Page Count: 18
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54AHC126 Quadruple bus buffer gate with three-state outputs

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC) ............................................. −0.5 V dc to +7.0 V dc DC input range (VIN) ................................................... −0.5 V dc to +7.0 V dc 4/ DC output range (VOUT) ................................................. −0.5 V dc to VCC +0.5 V dc 4/ DC input clamp current (IIK) (VIN < 0.0) ............................... −20 mA DC output clamp current (IOK) (VOUT < 0.0 or VOUT > VCC) ............... ±20 mA Continuous output current (IO) (VO = 0 to VCC) ......................... ±25 mA Continuous current through VCC or GND .................................. ±50 mA Storage temperature range (TSTG) ....................................... −65°C to +150°C Lead temperature (soldering 10 seconds) ................................ +300°C Thermal resistance, junction-to-case (ΘJC) ............................. See MIL-STD-1835 Junction temperature (TJ) .............................................. +150°C Maximum power dissipation at TA = +55°C (in still air) (PD) ............ 500 mW

Supply voltage range (VCC) ............................................. +2.0 V dc to +5.5 V dc Input voltage range (VIN) .............................................. +0.0 V dc to VCC Output voltage range (VOUT) ............................................ +0.0 V dc to VCC Minimum high level input voltage (VIH): VCC = 2.0 V ........................................................... +1.5 V VCC = 3.0 V ........................................................... +2.1 V VCC = 5.0 V ± 0.5 V ................................................... +3.85 V Maximum low level input voltage (VIL): VCC = 2.0 V ........................................................... +0.5 V VCC = 3.0 V ........................................................... +0.9 V VCC = 5.0 V ± 0.5 V ................................................... +1.65 V Maximum high level output current (IOH): VCC = 2.0 V ........................................................... −50µA VCC = 3.3 V ± 0.3 V ................................................... −4 mA VCC = 5.0 V ± 0.5 V ................................................... −8 mA Maximum low level output current (IOL): VCC = 2.0 V ........................................................... +50 µA VCC = 3.3 V ± 0.3 V ................................................... +4 mA VCC = 5.0 V ± 0.5 V ................................................... +8 mA Maximum input rise or fall rate (Δt/ΔV): VCC = 3.3 V ± 0.3 V ................................................... 100 ns/V VCC = 5.0 V ± 0.5 V ................................................... 20ns/V Case operating temperature range (TC) .................................. −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) .......................... XX percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 24, 2021
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
December 23, 2014
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
June 25, 2008
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-96862
September 9, 1996
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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