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DLA - SMD-5962-85152 REV D

MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 27 July 1992
Status: inactive
Page Count: 30
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit Access time Refresh 01 256K × 1 DRAM 150 ns 256 cycles (4 ms) 02 256K × 1 DRAM 200 ns 256 cycles (4 ms) 03 256K × 1 DRAM 120 ns 256 cycles (4 ms)

The case outline(s) shall be as designated in appendix C of MIL-M-58510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package X See figure 1 (18-terminal, .305" × .505"), rectangular chip carrier package Y See figure 1 (18-terminal, .305" × .505"), rectangular chip carrier package

Voltage range for any pin, including VCC supply 3/ - −1.0 V dc to +7.0 V dc Short circuit output current - - - - - - - - - - - - 50 mA Power dissipation - - - - - - - - - - - - - - - - - - 1 W Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case ((θJC): Cases X and Y - - - - - - - - - - - - - - - - - - - 50°C/W Case E - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C

Supply voltage range (VCC) - - - - - - - - - - - - 4.75 V dc to 5.25 V dc Supply voltage (VSS) - - - - - - - - - - - - - - - 0 V dc High level input voltage range (VIH) - - - - - - - 2.4 V dc to 5.0 V dc Low level input voltage range (VIL) - - - - - - - - −0.5 V dc to +0.6 V dc Case operating temperature range (TC) - - - - - - - −55°C to +110°C Refresh cycle time - - - - - - - - - - - - - - - - 4.0 ms

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 9, 2018
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 23, 2012
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 2, 2006
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 1, 1993
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-85152 REV D
July 27, 1992
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 6, 1990
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
October 4, 1988
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
May 5, 1987
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
January 2, 1986
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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