DLA - SMD-5962-85152 REV E
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 1 December 1993 |
| Status: | inactive |
| Page Count: | 32 |
Document History
April 9, 2018
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 23, 2012
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 2, 2006
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-85152 REV E
December 1, 1993
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
July 27, 1992
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 6, 1990
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
October 4, 1988
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
May 5, 1987
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
January 2, 1986
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.