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ASTM International - ASTM F1893-98

Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices

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Organization: ASTM International
Publication Date: 10 May 1998
Status: inactive
Page Count: 5
ICS Code (Semiconductor devices in general): 31.080.01
scope:

1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are required because of the high dose-rate levels that are necessary to cause burnout. Two modes of test are possible (1) survival test, and (2) A failure level test.

1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

Document History

March 1, 2018
Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-induced survivability and burnout failure. The test facility shall be...
January 1, 2011
Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic...
ASTM F1893-98
May 10, 1998
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or...
May 10, 1998
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
The use of FXR radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to...
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