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ASTM International - ASTM F1262M-95

Standard Guide for Transient Radiation Upset Threshold of Digital Integrated Circuits

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Organization: ASTM International
Publication Date: 10 November 1995
Status: inactive
Page Count: 5
scope:

1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

June 1, 2014
Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric) (Withdrawn 2023)
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy...
June 15, 2008
Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy...
December 10, 2002
Standard Guide for Transient Radiation Upset Threshold of Digital Integrated Circuits
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy...
ASTM F1262M-95
November 10, 1995
Standard Guide for Transient Radiation Upset Threshold of Digital Integrated Circuits
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy...
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