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DLA - SMD-5962-88635 REV A

MICROCIRCUIT, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE LOGIC DEVICE

inactive
Organization: DLA
Publication Date: 3 November 1993
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.4) 300 gate CMOS UV EPLD 50 ns 02 (see 6.4) 300 gate CMOS UV EPLD 15 ns 03 (see 6.4) 300 gate CMOS UV EPLD 12 ns

The case outline shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 1/

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 2/ - - - - - - - - - - −0.5 V dc to +7.0 V dc Programming supply voltage range (VPP) 2/- - - - - −0.5 V dc to +13.5 V dc DC input voltage range (VIN) 2/ - - - - - - - - - −0.5 V dc to VCC +0.3 V dc DC output voltage range (VO) 2/- - - - - - - - - - −0.5 V dc to VCC +0.3 V dc Storage temperature range - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - 320 mW Lead temperature (soldering, 10 seconds) Device type 01 - - - - - - - - - - - - - - - +300°C Device type 02, 03 - - - - - - - - - - - - - - +275°C Thermal resistance. junction-to-case (θJC) - - - - See MIL-STD-1835 Junction temperature (TJ) Device type 01 - - - - - - - - - - - - - - - +200°C Device type 02, 03 - - - - - - - - - - - - - - +150°C DC supply current (ICC or ISS) - - - - - - - - - - ±80 mA Data retention (devices 02 and 03 only) - - - - - 10 years (minimum)

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) Device type 01 - - - - - - - - - - - - - - - - 2.2 V dc to VCC + 0.3 V dc Device type 02, 03 - - - - - - - - - - - - - - 2.0 V dc to VCC + 3 V dc Low level input voltage range (VIL) - - - - - - - −0.3 V dc to +0.8 V dc Input rise time (tr) - - - - - - - - - - - - - - - 500 ns maximum Input fall time (tf) - - - - - - - - - - - - - - - 500 ns maximum Supply voltage rise time (trvcc) - - - - - - - - - 10 ns maximum Clock rise time (trclk) - - - - - - - - - - - - - 100 ns maximum Clock fall time (tfclk) - - - - - - - - - - - - - 100 ns maximum Case operating temperature range (TC)- - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 9, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 6, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE LOGIC DEVICE
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88635 REV A
November 3, 1993
MICROCIRCUIT, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE LOGIC DEVICE
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 19, 1989
MICROCIRCUIT, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE LOGIC DEVICE
A description is not available for this item.

References

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