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NPFC - MIL-M-38510/328

MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 23 March 1984
Status: inactive
Page Count: 46
scope:

This specification covers the detail requirements for monolithic silicon, low power Schottky TTL, bus transceivers with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

Device type shall be as follows:

Device type Circuit 01 Quadruple inverting bus transceivers with three-state outputs 02 Quadruple noninverting bus transceivers with three-state outputs 03 Octal noninverting bus transceivers with three-state outputs 04 Octal inverting bus transceivers and registers with three-state outputs 05 Octal inverting bus transceivers and registers with three-state outputs

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat-package R D-8 (20-lead, ¼ × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat-package L D-9 (24-lead, ¼" × 1 ¼"), dual-in-line package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range (VCC)- - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - −1.5 V dc at −18 mA to +5.5 V dc Storage temperature range - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device types 01 and 02 - - - - - - 297 mW dc Device type 03 - - - - - - - - - - 522.5 mW dc Device types 04 and 05 - - - - - - 907.5 mW dc Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - +300°C Thermal resistance, junction to case (θJC): Cases A and D - - - - - - - - - - - 70°C/W Case C- - - - - - - - - - - - - - - 50°C/W Cases R and L - - - - - - - - - - - 40°C/W Cases S and 2 - - - - - - - - - - - 60°C/W Junction temperature (TJ) - - - - - - +175°C

Beneficial comments (recommendations, additions, and deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, (RBE-2), Griffiss AFB, NY 13441, by using the self addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC)- - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH)- - - - - - - 2.0 V dc Maximum low-level input voltage (VIL) - - - - - - - Device types 01, 02, and 03 - - - - - - - - - - - 0.7 V dc Device types 04 and 05 - - - - - - - - - - - - - 0.5 V dc Normalized fanout (each input) 2/ - - - - - - - - - 20 maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C Width of clock pulse (tCLK) Device types 04 and 05 - - - - - - - - - - - - - 20 ns Setup time before clock (tsetup) Device types 04 and 05 - - - - - - - - - - - - - 20 ns Hold time (thold) Device types 04 and 05 - - - - - - - - - - - - - 0 ns

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Bus Transceivers with Three State Outputs, Monolithic Silicon
A description is not available for this item.
August 23, 2013
Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Bus Transceivers with Three State Outputs, Monolithic Silicon
A description is not available for this item.
November 13, 2008
Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Bus Transceivers with Three State Outputs, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, bus transceivers with three state outputs. Two product assurance classes and a choice of case...
November 18, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, bus transceivers with three state outputs. Two product assurance classes and a choice of case...
July 3, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
September 29, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 4, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 26, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 22, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/328
March 23, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low power Schottky TTL, bus transceivers with three-state outputs. Two product assurance classes and a choice of case...
July 16, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
October 1, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
September 23, 1980
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 29, 1980
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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