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DOD - SMD 5962-89839

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 12 July 1994
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Supply Device type Generic number Circuit function Access time current 01 16V8 16-input, 8-output, EECMOS, architecturally 30 130 generic, programmable AND-OR array 02 16V8 16-input, 8-output, EECMOS, architecturally 20 130 generic, programmable AND-OR array 03 16V8 16-input, 8-output, EECMOS, architecturally 15 130 generic, programmable AND-OR array 04 16V8 16-input, 8-output, EECMOS, architecturally 10 130 generic, programmable AND-OR array 05 16V8 16-input, 8-output, EECMOS, architecturally 25 65 generic, programmable AND-OR array 06 16V8 16-input, 8-output, EECMOS, architecturally 20 65 generic, programmable AND-OR array 07 16V8 16-input, 8-output, EECMOS, architecturally 7.5 130 generic, programmable AND-OR array

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat package 2 CQCC1-N20 20 Square chip carrier package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc Input voltage range applied . . . . . . . . . . . . . . . . . . . . −2.5 V dc to VCC + 1.0 V dc 1/ Off-state output voltage range applied . . . . . . . . . . . . . . . −2.5 V dc to VCC + 1.0 V dc 1/ Storage temperature range . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) 2/ . . . . . . . . . . . . 1.5 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . +260°C

Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . +175°C Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years (minimum) Endurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 erase/write cycles (minimum)

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc High level input voltage range (VIH) . . . . . . . . . . . . . . . . . 2.0 V dc to VCC + 1.0 V dc Low level input voltage range (VIL) . . . . . . . . . . . . . . . . . VSS −0.5 V dc to +0.8 V dc High level output current (IOH) . . . . . . . . . . . . . . . . . . . −2.0 mA maximum Low level output current (IOL) . . . . . . . . . . . . . . . . . . . . 12 mA maximum Case operating temperature range (TC) . . . . . . . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 23, 2020
MICROCIRCUIT, MEMORY, DIGITAL, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
October 15, 2014
MICROCIRCUIT, DIGITAL, DIGITAL, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 24, 2007
MICROCIRCUIT, MEMORY, DIGITAL, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 4, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 4, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 12, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD 5962-89839
July 12, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 23, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for...
December 18, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.

References

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