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DLA - SMD-5962-97550

MICROCIRCUIT, DIGITAL-LINEAR, DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 13 August 1997
Status: inactive
Page Count: 27
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 TL16C552AM Dual Asynchronous Communications Element With FIFO

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See Figure 1 68 Ceramic quad flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VDD)........................... −0.5 V dc to +7.0 V dc Input voltage (VIN).................................. −0.5 V dc to +7.0 V dc Continuous total power dissipation at 25°C........... 1689 mW 3/ Operating free air temperature range (TA)............ −55°C to +125°C Storage temperature range (TSTG)..................... −65°C to +150°C Thermal resistance, junction-to-case (RθJC).......... 3°C/W Thermal resistance, junction-to-air (RθJA)........... 74°C/W Junction temperature (TJ)............................ +175°C

Supply voltage range (VDD)........................... 4.75 V dc to 5.25 V dc High-level input voltage range (VIH)................. +2.0 V dc to VDD Low-level input voltage (VIL)........................ +0.0 V dc to +0.8 V Clock frequency, (fclock)............................ 16 MHz max Operating free-air temperature range (TA)............ −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 17, 2017
MICROCIRCUIT, DIGITAL-LINEAR, DUAL, ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 23, 2012
MICROCIRCUIT, DIGITAL-LINEAR, DUAL, ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  Replaceability....
February 6, 2003
MICROCIRCUIT, DIGITAL-LINEAR, DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-97550
August 13, 1997
MICROCIRCUIT, DIGITAL-LINEAR, DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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