NPFC - MIL-S-19500/516
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
| Organization: | NPFC |
| Publication Date: | 26 September 1989 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the detail requirements for 500 watt and 1500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. The suffix "A" denotes a 5 percent voltage tolerance.
See figure 1.
Maximum ratings are as shown in columns 5 through 8 of table V herein and as follows:
PR = 2 W (for 500 W peak pulse power devices) and 3 W (for 1500 W peak pulse power devices) at TA = +25°C (see figure 2 for derating).
PR = 3 W (for 500 W peak pulse power devices) and 5 W (for 1500 W peak pulse power devices) at TL= +75°C for L = 0.375 inches (see figure 3).
PPR = 500 W (for 1N6102 through 1N6137 and 1N6102A through 1N6137A) and 1500 W (for 1N6138 through 1N6173 and 1N6138A through 1N6173A) at tp = 1 ms (see figure 4).
−55°C ≤ Top ≤ +175°C, −55°C ≤ TSTG ≤ +175°C (ambient temperatures) Barometric pressure, reduced: 8 mm Hg (1N6137, 1N6137A, 1N6173, and 1N6173A only)
Primary electrical characteristics are as shown in columns 2 and 4 of table V. Beneficial comments (reconmnendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, US Army Laboratory Command, Reliability, Logistics and Standardization Division, ATTN: SLCET-R-S, Fort Monmouth, NJ 07703-5000, using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History