DLA - MIL-S-19500/516C
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1156102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1156138 THROUGH 1136173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N613NS, lN6102AUS THRWGH 1N6137AUS, 1N6138üS THROUGH 1N6173US, lN6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
| Organization: | DLA |
| Publication Date: | 20 January 1995 |
| Status: | inactive |
| Page Count: | 18 |
scope:
This specification covers the detail requirements for 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.
See 3.3.
Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:
PR = 2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at TA = +25°C (see figure 5 for derating).
PR = 3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at TL = +75°C for L = 0.375 inch (9.53 mm) (see figure 6).
PPR = 500 W (1N6102 through 1N6137 (including A and US suffix versions) and 1,500 W (1N6138 through 1N6173 (including A and US suffix versions)) at tp = 1 ms (see figure 7).
−55°C ≤ Top ≤ +175°C, −55°C ≤ TSTG ≤ +175°C (ambient temperatures)
Primary electrical characteristics are as shown in columns 2 and of table II herein. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Research Laboratory and Power Sources Directorate, ATTN: AMSRL-EP-RD, Ft. Monmouth, NJ 07703-5601 by using the Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter.
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