DLA - SMD-5962-96797 REV C
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 29 March 2004 |
| Status: | active |
| Page Count: | 23 |
Document History
SMD-5962-96797 REV C
March 29, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 13, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
July 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufactures List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
February 29, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...