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DLA - SMD-5962-97517

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 32K X 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 May 1997
Status: inactive
Page Count: 23
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Input buffer type Access time 01 6656 32K × 8-bit radiation hardened mask PROM CMOS 40 ns 02 6656 32K × 8-bit radiation hardened mask PROM TTL 40 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y See figure 1 28 Flat package Z See figure 1 36 Flat package

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VDD) .................................. −0.5 V dc to +7.0 V dc Voltage on any pin with respect to ground ................... −0.5 V dc; to VDD +0.5 V dc DC output current (IOUT) .................................... 25 mA Maximum power dissipation (PD) .............................. 2.5 W Lead temperature (soldering, 10 seconds maximum) ............ +270°C Thermal resistance, junction-to-case (ΘJC): Case X .......... See MIL-STD-1835 Case Y and Z ............................................. 2.0°C/W Junction temperature (TJ) ................................... +175°C Storage temperature range ................................... −65°C to +150°C Data retention .............................................. 10 years (minimum)

Supply voltage (VDD) ........................................ +4.5 V dc to +5.5 V dc Ground voltage (VSS) ........................................ 0.0 V dc; Case operating temperature range (TC) ....................... −55°C to +125°C Radiation features: Total dose irradiation, .................................... ≥ 1 × 106 Rads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets .............. ≥ 120 MEV-cm2/mg Neutron irradiation ........................................ 1 × 1014 neutrons/cm2 3/

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, tea method 5012) ................. as specified in the altered item drawing (AID)

intended Use:

Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 5, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 32K x 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 1, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 32K x 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-97517
May 30, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 32K X 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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