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DLA - SMD-5962-86015 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 June 1988
Status: inactive
Page Count: 23
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit Access time 01 see 6.4 64K × 1-bit, SRAM, TS 35 ns 02 see 6.4 64K × 1-bit, SRAM, TS 35 ns (data retention) 03 see 6.4 64K × 1-bit, SRAM, TS 45 ns 04 see 6.4 64K × 1-bit, SRAM, TS 45 ns (data retention) 05 see 6.4 64K × 1-bit, SRAM, TS 55 ns 06 see 6.4 64K × 1-bit, SRAM, TS 55 ns (data retention) 07 see 6.4 64K × 1-bit, SRAM, TS 70 ns 08 see 6.4 64K × 1-bit, SRAM, TS 70 ns (data retention)

The case outlines shall be as follows:

Outline letter Case outline X Figure 1 (22-lead, 1.260" × 0.290" × 0.090"), dual-in-line package Y Figure 2 (22-lead, 1.10" × 0.310" × 0.175"), dual-in-line package Z Figure 3 (22-terminal, 0.490" × 0.290" × 0.076"), chip carrier package

Input voltage range- - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 5 seconds)- - - - - - - +270°C Thermal resistance, junction-to-case (θJC): Case X - - - - - - - - - - - - - - - - - - - - - - +15°C/W 1/ Case Y - - - - - - - - - - - - - - - - - - - - - - +30°C/W 1/ Case Z - - - - - - - - - - - - - - - - - - - - - - +60°C/W 1/ Output voltage applied - - - - - - - - - - - - - - - −0.5 V dc to + 7.0 V dc Maximum power dissipation, (PD) - - - - - - - - - - 50 mA Maximum junction temperature (TJ)- - - - - - - - - - +150°C

Supply voltage range - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Input high voltage - - - - - - - - - - - - - - - - - 2.2 V dc to VCC to +0.5 V Input low voltage- - - - - - - - - - - - - - - - - - −0.5 V dc to +0.8 V dc Fanout current with output high (each) - - - - - - - 4.0 mA Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 16, 2017
MICROCIRCUIT, DIGITAL, CMOS, MEMORY, 64K X 1, STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 5, 2011
MICROCIRCUIT, DIGITAL, CMOS, MEMORY, 64K X 1, STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 29, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 0
SMD-5962-86015 REV A
June 17, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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