DLA - SMD-5962-89840 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 27 January 1994 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 20V8 20-input, 8-output, EE CMOS, architecturally 30 generic, programmable AND-OR array 02 20V8 20-input, 8-output, EE CMOS, architecturally 20 generic, programmable AND-OR array 03 20V8 20-input, 8-output, EE CMOS, architecturally 15 generic, programmable AND-OR array 04 20V8 20-input, 8-output, EE CMOS, architecturally 10 generic, programmable AND-OR array
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 Dual-in-line package 3 CQCC1-N28 28 Square chip carrier package
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish Letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc Input voltage range applied . . . . . . . . . . . . . . . . . −2.5 V dc to VCC + 1.0 V dc 1/ Off-state output voltage range applied . . . . . . . . . . . . −2.5 V dc to VCC + 1.0 V dc 1/ Storage temperature range . . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) 2/ . . . . . . . . . . . . . . 1.5 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . +260°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . . +175°C Data retention . . . . . . . . . . . . . . . . . . . . . . . . 10 years (minimum) Endurance . . . . . . . . . . . . . . . . . . . . . . . . . . 100 erase/write cycles (minimum)
Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc High level input voltage range (VIH) . . . . . . . . . . . . . . 2.0 V dc to VCC + 1.0 V dc Low level input voltage range (VIL) . . . . . . . . . . . . . . . VSS −0.5 V dc to +0.8 V dc High level output current (IOH) . . . . . . . . . . . . . . . . −2.0 mA maximum Low level output current (IOL) . . . . . . . . . . . . . . . . . 12 mA maximum Case operating temperature range (TC) . . . . . . . . . . . . . . −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
