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DLA - SMD-5962-89507 REV A

MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 26 February 1991
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC4066 Quad bilateral switch

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package 2 C-20 (20-terminal, .358" × .358" × .100"), leadless chip carrier package

Supply voltage range 1/- - - - - - - - - - - - - - - - - - - −0.5 V dc to +11.0 V dc DC input voltage 1/ - - - - - - - - - - - - - - -- - - - - - −0.5 V to VCC + 0.5 V DC output voltage 1/- - - - - - - - - - - - - - - -- - - - - −0.5 V to VCC + 0.5 V DC input diode current (IIK) - - - - - - - - - - - - - - - - ±20 mA DC switch diode current (IOK)- - - - - - - - - - - - - - - - ±20 mA DC switch current (IO)- - - - - - - - - - - - - - - -- - - - ±25 mA DC VCC or ground current (ICC) - - - - - - - - - - - - - - - ±50 mA Storage temperature range - - - - - - - - - - - - - - - -- - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - - - 500 mW 2/ Lead temperature (soldering, 10 seconds) - - - - - - - - - - +265°C Thermal resistance, junction-to-case (θJC) - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - - - ±175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - +2.0 V dc to +10.0 V dc DC input voltage range (VIN) - - - - - - - - - - - - - - - - 0 V dc to VCC Analog switch voltage range (VIS, VOS) - - - - - - - - - - - 0 V dc to VCC Case operating temperature range (TC)- - - - - - - - - - - - −55°C to +125°C Input rise or fall time: VCC = 2.0 V- - - - - - - - - - - - - - - - - - - - - - - - 0 to 1,000 ns VCC = 4.5 V- - - - - - - - - - - - - - - - - - - - - - - - 0 to 500 ns VCC = 6.0 V- - - - - - - - - - - - - - - - - - - - - - - - 0 to 400 ns Control input rise or fall time: VCC = 10.0 V - - - - - - - - - - - - - - - - - - - - - - - 0 to 250 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 9, 2023
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
November 6, 2017
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 10, 2009
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 18, 2000
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89507 REV A
February 26, 1991
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 2, 1989
MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
A description is not available for this item.

References

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