UNLIMITED FREE
ACCESS TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Select Your Free Newsletters

Industry Newsletters

Select Your Free Product Alerts

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-87513

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 February 1988
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 4096 × 1 CMOS static RAM 25 ns 02 (See 6.4) 4096 × 1 CMOS static RAM 35 ns 03 (See 6.4) 4096 × 1 CMOS static RAM 45 ns 04 (See 6.4) 1024 × 4 CMOS static RAM 25 ns 05 (See 6.4) 1024 × 4 CMOS static RAM 35 ns 06 (See 6.4) 1024 × 4 CMOS static RAM 45 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline V D-6 (18-lead, .300 row spacing), dual-in-line package X See figure 1 (18-lead, 5/16" × 7/16"), flat package

Voltage on any pin relative to VSS - - - - - - −2.0 V dc to +7.0 V dc Voltage applied to outputs - - - - - - - - - - −1.0 V dc to VCC + 0.5 V dc Storage temperature range - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - +260°C Thermal resistance, junction-to-case (θJC): Case V - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case X - - - - - - - - - - - - - - - - - - - 15°C/W Junction temperature (TJ) - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - - - - - - - - - - - - - 0 V Input high voltage (VIH) - - - - - - - - - - - 2.0 V dc to VCC + 0.5 V dc Input low voltage (VIL) - - - - - - - - - - - −1.0 V dc to 0.8 V dc Case operating temperature range (TC) - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD-5962-87513 REV E
May 19, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
SMD 5962-87513
March 12, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87513 REV C
August 16, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87513 REV B
August 9, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87513 REV A
December 7, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87513
February 2, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
View Less
View All

References

This document references:
MIL-STD-1835 - Electronic Component Case Outlines
Published by NPFC on September 21, 2009
This standard establishes and maintains a compilation of electronic component case outlines and should be useful to all levels of manufacturing that culminate in the production of reliable and...
This document references:
MIL-HDBK-103 - LIST OF STANDARD MICROCIRCUIT DRAWINGS
Published by NPFC on March 8, 2021
Purpose. The Standard Microcircuit Drawing Program (SMDP) is directly under the auspices of the DoD Parts Management Program (PMP). The PMP is implemented by MIL-HDBK-512, "Parts Management." The PMP...
This document references:
MIL-HDBK-780D VALID NOTICE 1 - Standard Microcircuit Drawings
Published by DLA on December 28, 2021
A description is not available for this item.
This document references:
MIL-PRF-38535M - INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING, GENERAL SPECIFICATION FOR
Published by DLA on November 1, 2022
Scope. This specification establishes the general performance requirements for integrated circuits or microcircuits and the quality and reliability assurance requirements, which are to be met for...
This document references:
MIL-STD-883 - TEST METHOD STANDARD MICROCIRCUITS
Published by NPFC on September 16, 2019
Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic...
View Less
View All
Advertisement