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DLA - SMD-5962-87614 REV B

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 18 March 1994
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC32 Quad 2-input OR gate 02 54AC11032 Quad 2-input OR gate

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line package D GDFP1-F14 or CDFP2-F14 14 Flat package E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package 2 CQCC1-N20 20 Square chip carrier package.

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range 1/ - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage 1/ - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage 1/ - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Input clamp diode current - - - - - - - - - - - - ±20 mA Output clamp diode current (device type 01)- - - - ±20 mA Output clamp diode current (device type 02)- - - - ±50 mA DC output current - - - - - - - - - - - - - - - - ±50 mA DC VCC or GND current (per pin) - - - - - - - - - ±100 mA 2/ Storage temperature range - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (ΘJC) - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 3/ - - - - - - - - - +175°C

Supply voltage (VCC) 1/ - - - - - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - −55°C to +125°C Input rise or fall times: VCC = 3.6 V - - - - - - - - - - - - - - - - - - - 0 to 8 ns VCC = 5.5 V - - - - - - - - - - - - - - - - - - - 0 to 8 ns

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

November 27, 2019
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
March 27, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
April 13, 2016
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
March 20, 2014
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
March 9, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 9, 2003
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.
January 17, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
July 27, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
December 14, 1999
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-87614 REV B
March 18, 1994
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 3, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 27, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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