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DLA - SMD-5962-88774 REV A

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 November 1989
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54F51 Dual 2-wide 2-input, 2-wide 3-input AND-OR-invert gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input current range - - - - - - - - - - - - - - - - - - −30 mA to +5.0 mA Voltage range applied to output in high output state - - −0.5 V to +VCC Current applied to output in low output state- - - - - - 40 mA Storage temperature range- - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - 41.25 mW 1/ Lead temperature (soldering, 10 seconds) - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum High level input voltage (VIH) - - - - - - - - - - - - - 2.0 V dc Low level input voltage (VIL)- - - - - - - - - - - - - - 0.8 V dc Input clamp current - - - - - - - - - - - - - - - - - - −18 mA High level output current (IOH)- - - - - - - - - - - - - −1.0 mA Low level output current (IOL) - - - - - - - - - - - - - 20 mA Case operating temperature range (TC)- - - - - - - - - - 55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 18, 2022
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
March 24, 2017
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-ORINVERT GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 8, 2011
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 8, 2005
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88774 REV A
November 22, 1989
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 21, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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