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DLA - SMD-5962-84036 REV E

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 27 April 1992
Status: inactive
Page Count: 28
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-Jan devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Supply voltage variation Address access time 01 10% 200 ns (synchronous) 02 10% 90 ns 03 10% 90 ns 04 10% 150 ns 05 10% 200 ns 06 10% 70 ns 07 10% 120 ns (synchronous) 08 10% 45 ns 09 10% 45 ns 10 10% 55 ns 11 10% 55 ns 12 10% 70 ns 13 10% 70 ns 14 10% 35 ns 15 10% 120 ns 16 10% 90 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package Y Figure 1, (24-lead, .308" × .408"), rectangular chip carrier package Z C-12 (32-terminal, .560" × .458" × ,120"), rectangular chip carrier package with castellated instead of chambered corners and extended pad metallization at terminal number 1. 3 C-4 (28-terminal, .460" × ,460" × .100"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - - −0.3 V dc to +7.0 V dc 2/ Temperature under bias - - - - - - - - - - - - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - - - - - - −55°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 5 seconds) - - - - - - - - +275°C Thermal resistance, junction-to-case (ΘJC): - - - - - - See MIL-M-38510, appendix C Case Y - - - - - - - - - - - - - - - - - - - - - - - 30°C/W Junction temperature (TJ) - - - - - - - - - - - - - - - +150°C 3/ All input or output voltages with respect to ground - - −0.3 V dc to VCC +0.3 V dc 4/

Case operating temperature range (TC) - - - - - - - - - −55°C to +125°C Input low voltage (VIL): Device types 01 through 16 - - - - - - - - - - - - - −0.3 V dc to 0.8 V dc 2/ Input high voltage (VIH): Device types 01, 07 - - - - - - - - - - - - - - - - - 2.4 V dc to VCC +0.3 V dc 2/ Device types 02 through 06, 08 through 16 - - - - - - 2.2 V dc to VCC +0.3 V dc 2/ Supply voltage range (VCC): - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc 2/ Minimum chip enable low time - - - - - - - - - - - - 40 ns 5/ Minimum chip enable high time - - - - - - - - - - - - 40 ns 5/ Maximum input rise time - - - - - - - - - - - - - - - 40 ns Maximum input fall time - - - - - - - - - - - - - - - 40 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

November 1, 2017
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
February 14, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 11, 2005
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 27, 2000
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-84036 REV E
April 27, 1992
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-Jan devices"....
January 25, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
October 9, 1987
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
December 2, 1985
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
February 25, 1985
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
August 23, 1984
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K (2048 X 8) BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

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