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DLA - SMD-5962-95793 REV C

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 7 December 2004
Status: active
Page Count: 25

Document History

SMD-5962-95793 REV C
December 7, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
March 29, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
November 30, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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