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DLA - SMD-5962-89841 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 July 1993
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provision for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 22V10 22-input, 10-output, EECMOS, architecturally 30 generic, programmable AND-OR array 02 22V10 22-input, 10-output, EECMOS, architecturally 20 generic, programmable AND-OR array 03 22V10 22-input, 10-output, EECMOS, architecturally 15 generic, programmable AND-OR array 04 22V10 22-input, 10-output, EECMOS, architecturally 25 generic, programmable AND-OR array 05 22V10 22-input, 10-output, EECMOS, architecturally 15 generic, programmable AND-OR array (higher tCO' lower fCLK2) 06 22V10 22-input, 10-output, EECMOS, architecturally 10 generic, programmable AND-OR array

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 flat pack L GDIP3-T24 or CDIP4-T24 24 dual-in-line 3 CQCC1-N28 28 square chip carrier

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage applied - - - - - - - - - - - - - - - −0.5 V dc to VCC +1.0 V dc 1/ Off-state output voltage applied - - - - - - - - - - −0.5 V dc to VCC +1.0 dc 1/ Storage temperature range (TSTG) - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - - - - - - - - - 1.5 W Lead temperature (soldering, 10 seconds) (TSOL) - - +260°C Thermal resistance, junction-to-case (ΘJC) - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - +175°C Data retention - - - - - - - - - - - - - - - - - - - 10 years (minimum) Endurance - - - - - - - - - - - - - - - - - - - - - 100 erase/write cycles (minimum)

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage (VIH) - - - - - - - - - - - 2.0 V dc to VCC +1.0 V dc Low level input voltage (VIL) - - - - - - - - - - - VSS −0.5 V dc to +0.8 V dc High level output current (IOH) - - - - - - - - - - −2.0 mA maximum Low level output current (IOL) - - - - - - - - - - - 12 mA maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 4, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
September 21, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 25, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 4, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 10, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
March 19, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provision for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
July 10, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provision for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 5, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
April 23, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
March 4, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provision for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89841 REV C
July 30, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provision for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 28, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
April 19, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
November 28, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE ARRAY LOGIC (EEPLD), MONOLITHIC SILICON
A description is not available for this item.
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