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DLA - SMD-5962-89537 REV A

MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 March 1994
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit Access time 01 (see 6.6) 16K × 8-bit UV EPROM 65 ns 02 (see 6.6) 16K × 8-bit UV EPROM 55 ns 03 (see 6.6) 16K × 8-bit UV EPROM 45 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style 1/ Y CDIP3-T28 or GDIP4-T28 28 Dual-in-line Z GDFP2-F28 28 Flat package U CQCC1-N32 32 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range to ground potential (VCC)- - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage range applied to the outputs in the high Z state - - −0.5 V dc to +7.0 V dc DC input voltage- - - - - - - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation - - - - - - - - - - - - - - - - - - - 1.0 W 2/ Lead temperature (soldering, 10 seconds)- - - - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC)- - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - +175°C Storage temperature range (TSTG)- - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias- - - - - - - - - - - - - - - - - - - - - −55°C to +125°C Data retention- - - - - - - - - - - - - - - - - - - - - - - - - 10 years, minimum Endurance - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 cycles/byte, minimum

Case operating temperature (TC) - - - - - - - - - - - - - - - - - −5°C to +125°C Input high voltage range (VIH) - - - - - - - - - - - - - - - - - +2.0 V dc Input Low voltage range (VIL) - - - - - - - - - - - - - - - - - - +0.8 V dc Supply voltage (VCC)- - - - - - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

June 15, 2018
MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
February 10, 2006
MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
February 10, 2006
MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89537 REV A
March 31, 1994
MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 26, 1989
MICROCIRCUITS, MEMORY, DIGITAL, 16K X 8 UV EPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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