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NPFC - MIL-M-38510/231

MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 2 April 1982
Status: inactive
Page Count: 53
scope:

This specification covers the detail requirements for monolithic silicon, Schottky TTL, static, 1024 bit random access memory microcircuits. Three product assurance classes and a choice of case outline/lead finish are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit Access time 01 1024X1 bit RAM, uncommitted 60 ns (tWHAC = 5 ns, collector tAVWL = 15 ns) 02 1024X1 bit RAM, three-state 60 ns (tWHAC = 5 ns, output tAVWL = 15 ns) 03 1024X1 bit lower power RAM, 70 ns uncommitted collector 04 1024X1 bit lower power RAM, 70 ns three-state output 05 1024X1 bit RAM, uncommitted 60 ns (tWHAC = 10 ns, collector tAVWL = 10 ns) 06 1024X1 bit RAM, three-state 60 ns (tWHAC = 10 ns, output tAVWL = 10 ns) 07 1024X1 bit Schottky RAM, 45 ns uncommitted collector 08 1024X1 bit Schottky RAM, 45 ns three-state output 09 256X4 bit RAM, uncommitted 60 ns collector 10 2564 bit RAM, three-state 60 ns output 11 256X4 bit low power RAM, 75 ns uncommitted collector 12 256X4 bit low power RAM, 75 ns three-state output 13 1024X1 bit low power RAM, 50 ns three-state output 14 256X4 bit RAM, three-state 45 ns output 15 256X4 bit low power RAM, 55 ns three-state output

The device class shall be the product assurance level as defined in MIL-M-38510. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 5426) appearing at the end of this document or by letter.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) E D-2 (16-lead, ¼" × ⅞"), dual-in-line package F F-5 (16-lead, ¼" × ⅜"), flat package W D-7 (22-lead, ⅜" × 1 ⅛"), dual-in-line package X See figure 1 (24-lead, ⅜" × ⅜"), flat package Y C-3 (24 terminal, .400" × .400"), sq. chip carrier

Supply voltage range - - - - - - - - - - - - - - - −0.5 V to +7.10 V Input voltage range - - - - - - - - - - - - - - - −0.5 V to +5.5 V Storage temperature - - - - - - - - - - - - - - - −65° tb +165°C Maximum power dissipation (PD) 1/: Device types 01, 02, 05, 06, 07,08, 09, 10, 14 - 935 mW Device types 03,04,13 - - - - - - - - - - - - - 413 mW Device types 11, 12, 15 - - - - - - - - - - - - 495 mW Voltage applied to outputs (output high) - - - - - −0.5 V to +5.5 V Output current (output low) - - - - - - - - - - - +20 mA Input current - - - - - - - - - - - - - - - - - - −12 mA to +5.0 mA Lead temperature (soldering, 10 seconds) - - - - - 300°C Thermal resistance, junction-to-case ( θJC): Case F, X - - - - - - - - - - - - - - - - - - - 30°C/W Case E, W - - - - - - - - - - - - - - - - - - - 30°C/W Case Y - - - - - - - - - - - - - - - - - - - - - 15°C/W Junction temperature (TJ) - - - - - - - - - - - - 165°C

Supply voltage- - - - - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH)- - - - 2.1V Maximum low level input voltage (VIL) - - - - 0.8 V Case operating temperature range- - - - - - - −55° to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logisitic support of existing equipment.

Document History

March 18, 2015
Microcircuits, Digital, SCHOTTKY TTL, 1024 Bit Random Access Memory (RAM), Monolithic Silicon
A description is not available for this item.
June 9, 2010
Microcircuits, Digital, SCHOTTKY TTL, 1024 Bit Random Access Memory (RAM), Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, Schottky TTL, static, 1024 bit random access memory microcircuits. Two product assurance classes and a choice of case...
August 30, 2005
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Schottky TTL, static, 1024 bit random access memory microcircuits. Two product assurance classes and a choice of case...
April 26, 2001
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
July 27, 1987
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
June 1, 1984
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
February 21, 1984
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/231
April 2, 1982
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Schottky TTL, static, 1024 bit random access memory microcircuits. Three product assurance classes and a choice of case...
May 1, 1981
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
June 3, 1980
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.
August 18, 1978
MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
A description is not available for this item.

References

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