scope:

This specification covers the detail requirements for 100 volt, silicon, current regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two level of product assurance are provided each unencapsulated device type.

See 3.3 (DO-7 and DO-213AB).

Maximum ratings are as shown in table II herein and as follows:

P_T = 500 mW (DO-7) at T_L = +50°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate to 0 at +175°C).

P_T = 500 mW (D0-213AB) at T_EC = +125°C. (Derate to 0 at +175°C).

−65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG≤ +175°C.

Primary electrical characteristic are as shown in column 2 of table II herein (nominally 0.22 mA dc ≤ I_p ≤ 4.70 mA dc).

R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7), (DO-14)

R_ΘJEC = 100°C/W (maximum) junction to endcaps (DO-213AB). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Rome Laboratory ATTN: RL/ERSS 525 Brook Road Griffiss AFB, NY 13441-4505, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.