scope:

This specification covers the performance requirements for 100 volt, silicon, current regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance are provided each unencapsulated device type.

See 3.3 (D0-7, D0-213AB, and JANC).

Maximum ratings are as shown in table II herein and as follows:

P_T = 500 mW (D0-7) at T_L = +50°C, L=0.375" (9.53 mm); both ends of case or diode body to heat sink at L=0.375" (9.53 mm). (Derate to 0 at +175°C).

P_T = 500 mW (D0-213AB) at T_EC = +125°C. (Derate to 0 at +175°C).

−65°C ≤ T_op ≤ +175°C; −65°C ≤ T_STG ≤ +175°C.

Primary electrical characteristic are as shown in column 2 of table II herein (nominally 0.22 mA dc ≤ I_P ≤ 4.70 mA dc).

R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7).

R_ΘJEC = 100°C/W (maximum) junction to endcaps (D0-213AB). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus ATTN: DSCC-VAT 3990 E. Broad Street Columbus, OH 432165000 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.