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DLA - SMD-5962-81023 REV F

MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 July 1992
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit 01 061 Single operational amplifier, Bi-FET, low power. 02 062 Dual operational amplifier, Bi-FET, low power. 03 064 Quad operational amplifier, Bi-FET, low power. 04 071 Single operational amplifier, Bi-FET, low power. 05 072 Dual operational amplifier, Bi-FET, low power. 06 074, 147 Quad operational amplifier, Bi-FET, low power.

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package H F-4 (10-lead, ¼" × ¼"), flat package P D-4 (B-lead, ¼" × ⅜"), dual-in-line package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - ±18 V dc Input voltage range 1/ - - - - - - - - - - - - - ±15 V dc Differential input voltage range - - - - - - - - ±30 V dc Storage temperature range- - - - - - - - - - - - −65°C to +150°C Output short-circuit duration 2/- - - - - - - - Unlimited Lead temperature (soldering, 60 seconds) +300°C Power dissipation, (PD) (internally limited): 3/ Case C - - - - - - - - - - - - - - - - - - - - 300 mW at TA = +25°C Case D - - - - - - - - - - - - - - - - - - - - 350 mW at TA = +25°C Case H - - - - - - - - - - - - - - - - - - - - 330 mW at TA = +25°C Case P - - - - - - - - - - - - - - - - - - - - 400 mW at TA = +25°C Case 2 - - - - - - - - - - - - - - - - - - - - 280 mW at TA = +25°C

Supply voltage range - - - - - - - - - - - - - - ±5 V dc to ±15 V dc Ambient operating temperature range (TA) - - - - −55°C to +125°C Thermal resistance, junction-to-case (θJC): Cases C, D, H, P, and 2 - - - - - - - - - - - See MIL-M-38510 (appendix C) Thermal resistance, junction-to-ambient (θJA): Cases C and P - - - - - - - - - - - - - - - - 120°C/W Case D - - - - - - - - - - - - - - - - - - - 140°C/W Case H - - - - - - - - - - - - - - - - - - - 185°C/W Case 2 - - - - - - - - - - - - - - - - - - - 65°C/W

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 27, 2023
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
March 21, 2017
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 17, 2012
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 8, 2006
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 22, 2005
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 30, 2004
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
January 4, 2002
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
June 18, 2001
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-81023 REV F
July 21, 1992
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
February 11, 1988
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
March 20, 1986
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
June 13, 1985
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
December 6, 1984
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
June 30, 1981
MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.

References

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