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DLA - SMD-5962-89524 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 24 March 1994
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Data retention Access time 01 (See 6.6) 64K × 4 CMOS static RAM Yes 70 ns 02 (See 6.6) 64K × 4 CMOS static RAM Yes 55 ns 03 (see 6.6) 64K × 4 CMOS static RAM Yes 45 ns 04 (see 6.6) 64K × 4 CMOS static RAM Yes 35 ns 05 (see 6.6) 64K × 4 CHOS static RAM Yes 25 ns 06 (see 6.6) 64K × 4 CHOS static RAM No 20 ns 07 (see 6.6) 64K × 4 CMOS static RAM No 15 ns

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 dual-in-line Y CQCC3-N28 28 rectangular leadless chip carrier

Terminal voltage with respect to ground - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - - - 50 mA Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases X, Y - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) - - - - - - - - - - - −0.5 V dc to +0.8 V dc 2/ Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

December 20, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
January 27, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 15, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-89524 REV A
March 24, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 1, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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