UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-89524

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 December 1989
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 64K × 4 CMOS static RAM 70 ns 02 (See 6.6) 64K × 4 CMOS static RAM 55 ns 03 (See 6.6) 64K × 4 CMOS static RAM 45 ns 04 (See 6.6) 64K × 4 CMOS static RAM 35 ns 05 (See 6.6) 64K × 4 CMOS static RAM 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X See figure 1 (28-lead, 1.420" × .310" × .200"), dual-in-line package Y C-11 (28-terminal, .560" ×.358" × .120"), rectangular chip carrier package

Terminal voltage with respect to ground - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - - - - - - 50 mA Storage temperature range - - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case X - - - - - - - - - - - - - - - - - - - - - - - - - - - 15°C/W Case Y - - - - - - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) - - - - - - - - - - - - - - −0.5 V dc to +0.8 V dc 2/ Case operating temperature range (TC) - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

December 20, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
January 27, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 15, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
March 24, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89524
December 1, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
Advertisement