DLA - SMD-5962-90622 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 30 October 1995 |
| Status: | inactive |
| Page Count: | 50 |
Document History
August 1, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
November 16, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 3, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
DD Form 1695, APR 92
Previous editions are obsolete.
March 6, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90622 REV A
October 30, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
March 5, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...