DLA - MIL-PRF-19500/699
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
inactive
| Organization: | DLA |
| Publication Date: | 15 September 2001 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE) characterization), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
October 16, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
A description is not available for this item.
MIL-PRF-19500/699
September 15, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE) characterization), power transistor....