DLA - MIL-PRF-19500/699 CANC NOTICE 1
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
inactive, Most Current
| Organization: | DLA |
| Publication Date: | 16 October 2006 |
| Status: | inactive |
| Page Count: | 1 |
Document History
MIL-PRF-19500/699 CANC NOTICE 1
October 16, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
A description is not available for this item.
September 15, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, AND 2N7529U3 JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE) characterization), power transistor....