UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

NPFC - MIL-M-38510/313

MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON

inactive
Buy Now
Organization: NPFC
Publication Date: 22 July 1983
Status: inactive
Page Count: 20
scope:

This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, Schmitt-trigger positive-NAND gate and inverter microcircuits. Two product assurance classes and a choice of case outline and lead finishes are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 Dual-4 input, Schmitt-trigger positive NAND gate 02 Hex, Schmitt-trigger inverter 03 Quad-2 input, Schmitt-trigger positive NAND gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾") dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range- - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - −1.5 V dc at −18 mA dc to +5.5 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device type 01- - - - - - - - - - - - - - 38.5 mW dc Device type 02- - - - - - - - - - - - - - 115.5 mW dc Device type 03- - - - - - - - - - - - - - 77 mW dc Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC): Cases A, B, and D - - - - - - - - - - - - 70°C/W Case X - - - - - - - - - - - - - - - - - 60°C/W Case C- - - - - - - - - - - - - - - - - - 50°C/W Junction temperature (TJ)- - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage(VCC) - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH)- - +1.4 V dc Maximum low-level input voltage (VIL) - - +1.0 V dc Normalized fanout (each output) 2/- - - - 10 maximum Case operating temperature range (TC) - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar Low-Power Schottky TTl, Schmitt Trigger Positive Nand Gates and Inverters, Monolithic Silicon
A description is not available for this item.
January 17, 2014
Microcircuits, Digital, Bipolar Low-Power Schottky TTl, Schmitt Trigger Positive Nand Gates and Inverters, Monolithic Silicon
A description is not available for this item.
April 2, 2009
Microcircuits, Digital, Bipolar Low-Power Schottky TTl, Schmitt Trigger Positive Nand Gates and Inverters, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, Schmitt trigger positive NAND gate and inverter microcircuits. Two product assurance classes and a...
May 23, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, Schmitt trigger positive NAND gate and inverter microcircuits. Two product assurance classes and a...
December 30, 1999
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
December 8, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/313
July 22, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, Schmitt-trigger positive-NAND gate and inverter microcircuits. Two product assurance classes and a...
December 21, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
January 19, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
August 16, 1978
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
January 12, 1978
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
June 17, 1977
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.
August 24, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, SCHMITT TRIGGER POSITIVE NAND GATES AND INVERTERS, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement