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DLA - SMD-5962-94599

MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 August 1994
Status: inactive
Page Count: 25
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Access Store Recall Device type Generic number 1/ Circuit function Time Cycle Cycle Endurance 01 12C68 8K X 8 NVSRAM 55 ns 12 ms 25 µs 100,000 cycles 02 12C68 8K X 8 NVSRAM 45 ns 12 ms 25 µs 100,000 cycles 03 12C68 8K X 8 NVSRAM 35 ns 12 ms 25 µs 100,000 cycles

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line Y CQCC3-N28 28 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish Letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (Vcc) . . . . . . . . . . . . . . −0.6 V dc to 7.0 V dc Voltage on DQ(0-7) with outputs in high Z state . . . −0.5 V to (Vcc+0.5 V) Input Voltage Operating Range (VIH, VIL) . . . . . . . −0.6 V dc to 7.0 V dc Storage Temperature Range . . . . . . . . . . . . . . −65°C to +150°C Maximum Power Dissipation (PD) . . . . . . . . . . . . 1.0 W Maximum Output Current . . . . . . . . . . . . . . . . 15 mA Lead Temperature (Soldering) . . . . . . . . . . . . . 300°C Junction Temperature (TJ) 4/ . . . . . . . . . . . . . 175°C Thermal Resistance, Junction to Case (θJC) . . . . . . See MIL-STD-1835 Data Retention . . . . . . . . . . . . . . . . . . . . 10 Years to nonvolatile array (minimum) Endurance (as Store cycles to non-volatile array) . . 100,000 Store Cycles (minimum)

Supply voltage range (Vcc) . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Case Operating Temperature Range (TC) . . . . . . . . −55°C to +125°C Input Voltage, low range (VIL) . . . . . . . . . . . . VSS−0.5 V dc to 0.8 V dc, all inputs Input Voltage, high range (VIH) . . . . . . . . . . . 2.2 V dc to VCC+0.5 V dc, all inputs

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 11, 2014
MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 27, 2006
MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 16, 2001
MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-94599
August 12, 1994
MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
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