NPFC - MIL-M-38510/346
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, TRANSPARENT AND OCTAL D TYPE LATCHES, CASCADABLE, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 12 February 1987 |
| Status: | inactive |
| Page Count: | 41 |
scope:
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, Octal transparent and Octal D type latches (three state) microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510, and as specified herein.
The device types shall be as follows:
Device type Circuit 01 Octal transparent latch with active low enable 3-state outputs 02 Octal transparent latch with active low enable 3-state outputs 03 Octal D-type latch with 3-state inverted outputs 04 Octal D-type latch with 3 state outputs
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) R D-8 (20 lead, ¼" × 1-1/16"), dual-in-line package S F-9 (20 lead, ¼" × ½"), flat package 2 C-2 (20 terminal, .350" × .350"), square chip carrier
Supply voltage range- - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - −1.2 V dc at −18 mA to +7.0 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD): 1/ Device type 01- - - - - - - - - - - - - - 330 mW Device type 02- - - - - - - - - - - - - - 385 mW Device type 03- - - - - - - - - - - - - - 336 mW Device type 04- - - - - - - - - - - - - - 303 mW Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC): Cases R,S - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2- - - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (TJ) 3/- - - - - - - - +175° C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage (VCC) - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH) - - - 2.0 V dc Maximum low-level input voltage (VIL)- - - - 0.8 V dc Width of latch enable pulse high tpw (LEH): Device type 01 - - - - - - - - - - - - - - 5.0 ns minimum Device type 02 - - - - - - - - - - - - - - 6.0 ns minimum Device types 03, 04- - - - - - - - - - - - 4.0 ns minimum Setup time data high to latch enable pulse TS (H): Device type 01 - - - - - - - - - - - - - - 2.0 ns minimum Device types 02, 03, 04- - - - - - - - - - 2.0 ns minimum Setup time data low to latch enable pulse TS (L): Device type 01 - - - - - - - - - - - - - - 2.0 ns minimum Device types 02, 03, 04- - - - - - - - - - 2.0 ns minimum Hold time data high to latch enable pulse TH (H): Device type 01 - - - - - - - - - - - - - - 4.0 ns minimum Device types 02, 03, 04- - - - - - - - - - 3.0 ns minimum Hold time data low to high latch enable pulse TH (L): Device type 01 - - - - - - - - - - - - - - 4.0 ns minimum Device type 02 - - - - - - - - - - - - - - 3.0 ns minimum Device type 03 - - - - - - - - - - - - - - 3.0 ns minimum Device type 04 - - - - - - - - - - - - - - 4.0 ns minimum Case operating temperature range (TC)- - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.
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