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DLA - SMD-5962-87549 REV C

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 25 June 1993
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC00 Quad 2-input NAND gate 02 54AC11000 Quad 2-input NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾") dual-in-line package D F-2 (14-lead, ¼" × ⅜") flat package E D-2 (16-lead, ¼' × ⅞") dual-in-line package F F-5 (16-lead, ¼" × ⅜") flat package 2 C-2 (20-terminal, .350" × .350") square chip carrier package

Supply voltage range 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage 1/ - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage 1/ - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - - - ± 20 mA DC output current (per pin) - - - - - - - - - - - - - - - ± 50 mA DC VCC or GND current (per pin) - - - - - - - - - - - - - ± 100 mA Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds)- - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases C, D, E, F, and 2 - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/ - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) 3/ - - - - - - - - - - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - - - - - - - −55°C to +125°C Input rise or fall times: VCC = 3.6 V - - - - - - - - - - - - - - - - - - - - - - - - 0 to 116 ns (10% to 90%, 40 ns/V) VCC = 5.5 V - - - - - - - - - - - - - - - - - - - - - - - - 0 to 88 ns (10% to 90%, 20 ns/V)

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 27, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
April 13, 2015
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 6, 2015
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 12, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 24, 2008
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 16, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 1, 2003
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
March 23, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-87549 REV C
June 25, 1993
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
March 23, 1993
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 16, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
April 29, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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