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DLA - SMD-5962-87592 REV A

MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 April 1988
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 9150-25 1024 × 4 high speed static R/W RAM 25 ns 02 9150-35 1024 × 4 high speed static R/W RAM 35 ns 03 9150-45 1024 × 4 high speed static R/W RAM 45 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" ×.090"), flat package L D-9 (24-lead, 1.280" ×.310" ×.200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120"), rectangular chip carrier

Supply voltage range - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Storage temperature range- - - - - - - - - - −65°C to +150°C Maximum power dissipation.(PD) 1/ - - - - - 1.2 W Lead temperature (soldering, 10 seconds) - - +300°C Thermal resistance, junction-to-case (θJC): Cases K, L, and X- - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - +175°C DC output current- - - - - - - - - - - - - - 20 mA All signal voltages with respect to GND- - - −3.5 V dc to +7.0 V dc

Supply voltage (VCC) - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - 2.2 V dc Maximum low level input voltage (VIL)- - - - 0.8 V dc Case operating temperature range (TC)- - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 10, 2017
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
October 1, 2009
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
September 29, 2000
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87592 REV A
April 29, 1988
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 24, 1987
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

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