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DLA - SMD-5962-89746

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 14 December 1989
Status: inactive
Page Count: 10
scope:

This drawing describes devices requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HCT30 8-input NAND gate, TTL compatible inputs

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (¼-lead, .785" × .310" × .200"), dual-in-line package

Supply Voltage range 1/ - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range 1/ - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage range 1/- - - - - - - - - - - - - - −0.5 V dc to VCC+ 0.5 V dc DC input diode current- - - - - - - - - - - - - - - - ±20 mA DC output diode current - - - - - - - - - - - - - - - ±20 mA DC output drain current - - - - - - - - - - - - - - - ±25 mA DC VCC or GND current - - - - - - - - - - - - - - - - ±50 mA Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds)- - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC)- - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/- - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Input voltage range- - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC)- - - - - - - - −55°C to +125°C Input rise or fall times, VCC = 4.5 V dc - - - - - - 0 to 500 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 10, 2023
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
May 23, 2017
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 19, 2011
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 1, 2005
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89746
December 14, 1989
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing describes devices requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"....

References

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